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|Title:||A robust and accurate drain current I-V model for MESFET||Authors:||Ooi, B.L.
|Issue Date:||2001||Citation:||Ooi, B.L.,Ma, J.Y.,Leong, M.S. (2001). A robust and accurate drain current I-V model for MESFET. Asia-Pacific Microwave Conference Proceedings, APMC 1 : 236-239. ScholarBank@NUS Repository.||Abstract:||A new empirical model has been developed to more accurately model DC I-V characteristics of GaAs MESFET transistor. The new model equations describe device drain current as a polynomial of effective gate-source voltage Veff. It is capable of accurately model the device current-voltage behaviour at different operation regions. Most specially, device operation around pinch-off region is more accurately described through the use of a specially designed transformation. Measured and modelled results are compared, and good agreement has been obtained. Comparison between the proposed model, the Curtice  and the Chalmers model  are also made.||Source Title:||Asia-Pacific Microwave Conference Proceedings, APMC||URI:||http://scholarbank.nus.edu.sg/handle/10635/83418||ISBN:||0780371380|
|Appears in Collections:||Staff Publications|
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