Please use this identifier to cite or link to this item: https://doi.org/10.1109/IEDM.2010.5703413
DC FieldValue
dc.titleA novel floating body cell memory with a laterally engineered bandgap using a Si-Si:C heterostructure
dc.contributor.authorChoi, S.-J.
dc.contributor.authorMoon, D.-I.
dc.contributor.authorDing, Y.
dc.contributor.authorKong, E.Y.J.
dc.contributor.authorYeo, Y.-C.
dc.contributor.authorChoi, Y.-K.
dc.date.accessioned2014-10-07T04:40:46Z
dc.date.available2014-10-07T04:40:46Z
dc.date.issued2010
dc.identifier.citationChoi, S.-J.,Moon, D.-I.,Ding, Y.,Kong, E.Y.J.,Yeo, Y.-C.,Choi, Y.-K. (2010). A novel floating body cell memory with a laterally engineered bandgap using a Si-Si:C heterostructure. Technical Digest - International Electron Devices Meeting, IEDM : 22.4.1-22.4.4. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/IEDM.2010.5703413" target="_blank">https://doi.org/10.1109/IEDM.2010.5703413</a>
dc.identifier.isbn9781424474196
dc.identifier.issn01631918
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83397
dc.description.abstractA lateral bandgap engineered floating body cell (FBC) memory is demonstrated for the first time; it features a high-k gate dielectric, a metal gate, and an epitaxially grown Si0.99C0.01 S/D. Design of valence band offset and incorporation of strain effects are achieved from a heterogeneously mismatched lattice for S/D regions. The figures of merit in the FBC memory, particularly the retention time, operational voltage, signal sensing margin, and non-destructive read operation, are remarkably enhanced under various operating conditions. ©2010 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/IEDM.2010.5703413
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/IEDM.2010.5703413
dc.description.sourcetitleTechnical Digest - International Electron Devices Meeting, IEDM
dc.description.page22.4.1-22.4.4
dc.description.codenTDIMD
dc.identifier.isiutNOT_IN_WOS
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