Please use this identifier to cite or link to this item:
https://doi.org/10.1109/IEDM.2010.5703413
DC Field | Value | |
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dc.title | A novel floating body cell memory with a laterally engineered bandgap using a Si-Si:C heterostructure | |
dc.contributor.author | Choi, S.-J. | |
dc.contributor.author | Moon, D.-I. | |
dc.contributor.author | Ding, Y. | |
dc.contributor.author | Kong, E.Y.J. | |
dc.contributor.author | Yeo, Y.-C. | |
dc.contributor.author | Choi, Y.-K. | |
dc.date.accessioned | 2014-10-07T04:40:46Z | |
dc.date.available | 2014-10-07T04:40:46Z | |
dc.date.issued | 2010 | |
dc.identifier.citation | Choi, S.-J.,Moon, D.-I.,Ding, Y.,Kong, E.Y.J.,Yeo, Y.-C.,Choi, Y.-K. (2010). A novel floating body cell memory with a laterally engineered bandgap using a Si-Si:C heterostructure. Technical Digest - International Electron Devices Meeting, IEDM : 22.4.1-22.4.4. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/IEDM.2010.5703413" target="_blank">https://doi.org/10.1109/IEDM.2010.5703413</a> | |
dc.identifier.isbn | 9781424474196 | |
dc.identifier.issn | 01631918 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/83397 | |
dc.description.abstract | A lateral bandgap engineered floating body cell (FBC) memory is demonstrated for the first time; it features a high-k gate dielectric, a metal gate, and an epitaxially grown Si0.99C0.01 S/D. Design of valence band offset and incorporation of strain effects are achieved from a heterogeneously mismatched lattice for S/D regions. The figures of merit in the FBC memory, particularly the retention time, operational voltage, signal sensing margin, and non-destructive read operation, are remarkably enhanced under various operating conditions. ©2010 IEEE. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/IEDM.2010.5703413 | |
dc.source | Scopus | |
dc.type | Conference Paper | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1109/IEDM.2010.5703413 | |
dc.description.sourcetitle | Technical Digest - International Electron Devices Meeting, IEDM | |
dc.description.page | 22.4.1-22.4.4 | |
dc.description.coden | TDIMD | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
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