Please use this identifier to cite or link to this item: https://doi.org/10.1109/IEDM.2010.5703413
Title: A novel floating body cell memory with a laterally engineered bandgap using a Si-Si:C heterostructure
Authors: Choi, S.-J.
Moon, D.-I.
Ding, Y.
Kong, E.Y.J.
Yeo, Y.-C. 
Choi, Y.-K.
Issue Date: 2010
Citation: Choi, S.-J.,Moon, D.-I.,Ding, Y.,Kong, E.Y.J.,Yeo, Y.-C.,Choi, Y.-K. (2010). A novel floating body cell memory with a laterally engineered bandgap using a Si-Si:C heterostructure. Technical Digest - International Electron Devices Meeting, IEDM : 22.4.1-22.4.4. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2010.5703413
Abstract: A lateral bandgap engineered floating body cell (FBC) memory is demonstrated for the first time; it features a high-k gate dielectric, a metal gate, and an epitaxially grown Si0.99C0.01 S/D. Design of valence band offset and incorporation of strain effects are achieved from a heterogeneously mismatched lattice for S/D regions. The figures of merit in the FBC memory, particularly the retention time, operational voltage, signal sensing margin, and non-destructive read operation, are remarkably enhanced under various operating conditions. ©2010 IEEE.
Source Title: Technical Digest - International Electron Devices Meeting, IEDM
URI: http://scholarbank.nus.edu.sg/handle/10635/83397
ISBN: 9781424474196
ISSN: 01631918
DOI: 10.1109/IEDM.2010.5703413
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