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|Title:||A novel consistent gate-charge model of GaAs MESFETs for the design of K u-band power amplifiers||Authors:||Zhong, Z.
|Issue Date:||2011||Citation:||Zhong, Z.,Guo, Y.,Leong, M.S. (2011). A novel consistent gate-charge model of GaAs MESFETs for the design of K u-band power amplifiers. Asia-Pacific Microwave Conference Proceedings, APMC : 295-298. ScholarBank@NUS Repository.||Abstract:||In this paper, a novel consistent gate charge model for GaAs MESFETs based upon charge conservation is proposed. This new model is capable of accurately modeling the transistor under various biasing conditions. Moreover, the performance prediction in the linear region, saturation knee region and sub-threshold region is greatly improved. Measured and modeled results of a 2×150μm GaAs MESFET are compared and good agreement has been obtained. In addition, a Ku-band power amplifier was designed with the new model for the verification of its nonlinear properties. © 2011 Engineers Australia.||Source Title:||Asia-Pacific Microwave Conference Proceedings, APMC||URI:||http://scholarbank.nus.edu.sg/handle/10635/83393||ISBN:||9780858259744|
|Appears in Collections:||Staff Publications|
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