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|Title:||A new self-aligned contact technology for III-V MOSFETs||Authors:||Guo, H.
|Issue Date:||2010||Citation:||Guo, H.,Zhang, X.,Chin, H.-C.,Gong, X.,Koh, S.-M.,Zhan, C.,Luo, G.-L.,Chang, C.-Y.,Lin, H.-Y.,Chien, C.-H.,Han, Z.-Y.,Huang, S.-C.,Cheng, C.-C.,Ko, C.-H.,Wann, C.H.,Yeo, Y.-C. (2010). A new self-aligned contact technology for III-V MOSFETs. Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010 : 152-153. ScholarBank@NUS Repository. https://doi.org/10.1109/VTSA.2010.5488907||Abstract:||We report the first demonstration of a self-aligned contact technology for III-V MOSFETs. A novel epitaxy process with in-situ surface treatment was developed to selectively form a thin continuous germanium-silicon (GeSi) layer on gallium arsenide (GaAs) source and drain (S/D) regions. By precisely and fully converting the GeSi layer into NiGeSi, while diffusing Ge and Si into GaAs to form heavily n+ doped regions, a novel self-aligned nickel germanosilicide (NiGeSi) ohmic contact was achieved. This is expected to significantly enhance the performance of III-V MOSFETs. © 2010 IEEE.||Source Title:||Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010||URI:||http://scholarbank.nus.edu.sg/handle/10635/83388||ISBN:||9781424450633||DOI:||10.1109/VTSA.2010.5488907|
|Appears in Collections:||Staff Publications|
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