Please use this identifier to cite or link to this item: https://doi.org/10.1109/ESSDERC.2012.6343362
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dc.titleA gate-last In0.53Ga0.47As channel FinFET with Molybdenum source/drain contacts
dc.contributor.authorZhang, X.
dc.contributor.authorGuo, H.X.
dc.contributor.authorGong, X.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:40:14Z
dc.date.available2014-10-07T04:40:14Z
dc.date.issued2012
dc.identifier.citationZhang, X.,Guo, H.X.,Gong, X.,Yeo, Y.-C. (2012). A gate-last In0.53Ga0.47As channel FinFET with Molybdenum source/drain contacts. European Solid-State Device Research Conference : 177-180. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/ESSDERC.2012.6343362" target="_blank">https://doi.org/10.1109/ESSDERC.2012.6343362</a>
dc.identifier.isbn9781467317078
dc.identifier.issn19308876
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83348
dc.description.abstractWe demonstrated In0.53Ga0.47As channel FinFETs with self-aligned Molybdenum (Mo) contacts for the first time. By using self-aligned Mo contacts formed on in-situ doped n++ In0.53Ga 0.47As source and drain, series resistance of ∼250 Ω·μm was achieved, which is the lowest value ever reported for In0.53Ga0.47As non-planar devices. A gate-last process was used. FinFET with channel length of 500 nm and EOT of 3 nm has an I ON/IOFF of over 105 and peak Gm of 255 μS/μm at VD = 0.5 V. © 2012 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/ESSDERC.2012.6343362
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/ESSDERC.2012.6343362
dc.description.sourcetitleEuropean Solid-State Device Research Conference
dc.description.page177-180
dc.identifier.isiutNOT_IN_WOS
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