Please use this identifier to cite or link to this item:
|Title:||A gate-last In0.53Ga0.47As channel FinFET with Molybdenum source/drain contacts||Authors:||Zhang, X.
|Issue Date:||2012||Citation:||Zhang, X.,Guo, H.X.,Gong, X.,Yeo, Y.-C. (2012). A gate-last In0.53Ga0.47As channel FinFET with Molybdenum source/drain contacts. European Solid-State Device Research Conference : 177-180. ScholarBank@NUS Repository. https://doi.org/10.1109/ESSDERC.2012.6343362||Abstract:||We demonstrated In0.53Ga0.47As channel FinFETs with self-aligned Molybdenum (Mo) contacts for the first time. By using self-aligned Mo contacts formed on in-situ doped n++ In0.53Ga 0.47As source and drain, series resistance of ∼250 Ω·μm was achieved, which is the lowest value ever reported for In0.53Ga0.47As non-planar devices. A gate-last process was used. FinFET with channel length of 500 nm and EOT of 3 nm has an I ON/IOFF of over 105 and peak Gm of 255 μS/μm at VD = 0.5 V. © 2012 IEEE.||Source Title:||European Solid-State Device Research Conference||URI:||http://scholarbank.nus.edu.sg/handle/10635/83348||ISBN:||9781467317078||ISSN:||19308876||DOI:||10.1109/ESSDERC.2012.6343362|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.