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https://doi.org/10.1109/ESSDERC.2012.6343362
| Title: | A gate-last In0.53Ga0.47As channel FinFET with Molybdenum source/drain contacts | Authors: | Zhang, X. Guo, H.X. Gong, X. Yeo, Y.-C. |
Issue Date: | 2012 | Citation: | Zhang, X.,Guo, H.X.,Gong, X.,Yeo, Y.-C. (2012). A gate-last In0.53Ga0.47As channel FinFET with Molybdenum source/drain contacts. European Solid-State Device Research Conference : 177-180. ScholarBank@NUS Repository. https://doi.org/10.1109/ESSDERC.2012.6343362 | Abstract: | We demonstrated In0.53Ga0.47As channel FinFETs with self-aligned Molybdenum (Mo) contacts for the first time. By using self-aligned Mo contacts formed on in-situ doped n++ In0.53Ga 0.47As source and drain, series resistance of ∼250 Ω·μm was achieved, which is the lowest value ever reported for In0.53Ga0.47As non-planar devices. A gate-last process was used. FinFET with channel length of 500 nm and EOT of 3 nm has an I ON/IOFF of over 105 and peak Gm of 255 μS/μm at VD = 0.5 V. © 2012 IEEE. | Source Title: | European Solid-State Device Research Conference | URI: | http://scholarbank.nus.edu.sg/handle/10635/83348 | ISBN: | 9781467317078 | ISSN: | 19308876 | DOI: | 10.1109/ESSDERC.2012.6343362 |
| Appears in Collections: | Staff Publications |
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