Please use this identifier to cite or link to this item:
|Title:||A gate-last In0.53Ga0.47As channel FinFET with Molybdenum source/drain contacts||Authors:||Zhang, X.
|Issue Date:||2012||Citation:||Zhang, X.,Guo, H.X.,Gong, X.,Yeo, Y.-C. (2012). A gate-last In0.53Ga0.47As channel FinFET with Molybdenum source/drain contacts. European Solid-State Device Research Conference : 177-180. ScholarBank@NUS Repository. https://doi.org/10.1109/ESSDERC.2012.6343362||Abstract:||We demonstrated In0.53Ga0.47As channel FinFETs with self-aligned Molybdenum (Mo) contacts for the first time. By using self-aligned Mo contacts formed on in-situ doped n++ In0.53Ga 0.47As source and drain, series resistance of ∼250 Ω·μm was achieved, which is the lowest value ever reported for In0.53Ga0.47As non-planar devices. A gate-last process was used. FinFET with channel length of 500 nm and EOT of 3 nm has an I ON/IOFF of over 105 and peak Gm of 255 μS/μm at VD = 0.5 V. © 2012 IEEE.||Source Title:||European Solid-State Device Research Conference||URI:||http://scholarbank.nus.edu.sg/handle/10635/83348||ISBN:||9781467317078||ISSN:||19308876||DOI:||10.1109/ESSDERC.2012.6343362|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on May 22, 2019
checked on May 21, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.