Please use this identifier to cite or link to this item: https://doi.org/10.1117/12.545358
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dc.titleA 3 × 2 waveguide switch based on SiGe for C-band operation
dc.contributor.authorTeng, J.H.
dc.contributor.authorChua, S.J.
dc.contributor.authorMiao, L.Y.
dc.contributor.authorYin, R.
dc.contributor.authorLi, B.J.
dc.contributor.authorFitzgerald, E.
dc.contributor.authorLeitz, C.W.
dc.date.accessioned2014-10-07T04:39:55Z
dc.date.available2014-10-07T04:39:55Z
dc.date.issued2004
dc.identifier.citationTeng, J.H., Chua, S.J., Miao, L.Y., Yin, R., Li, B.J., Fitzgerald, E., Leitz, C.W. (2004). A 3 × 2 waveguide switch based on SiGe for C-band operation. Proceedings of SPIE - The International Society for Optical Engineering 5451 : 243-250. ScholarBank@NUS Repository. https://doi.org/10.1117/12.545358
dc.identifier.issn0277786X
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83321
dc.description.abstractA waveguide switch structure with three input and two output ports is designed in SiGe/Si material for the operation around 1.55 μm in wavelength. Strained Si 0.96Ge 0.04 layer with a thickness of 2.5 μm is used as the waveguide core layer. Single mode ridge waveguide of 10 μm wide and 1μm deep is formed by plasma etching. The switching functi aaon is realized by total internal reflection. Two separate electrodes are used to control the refractive index change in the intersection region through carrier injection. The switch device can also work as splitter, modulator, or add-drop multiplexer, etc. around wavelength of 1.55 μm. An extinction ratio of about 20 dB is achieved for the modulation state from the two side input ports and about 10dB for the central input port.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1117/12.545358
dc.sourceScopus
dc.subjectModulator
dc.subjectOptical switch
dc.subjectSiGe
dc.subjectTotal internal reflection
dc.subjectWaveguide
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1117/12.545358
dc.description.sourcetitleProceedings of SPIE - The International Society for Optical Engineering
dc.description.volume5451
dc.description.page243-250
dc.description.codenPSISD
dc.identifier.isiut000223995500028
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