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https://doi.org/10.1117/12.566426
DC Field | Value | |
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dc.title | 3×2 integrated microphotonic switches | |
dc.contributor.author | Li, B. | |
dc.contributor.author | Chua, S.J. | |
dc.contributor.author | Fitzgerald, E.A. | |
dc.contributor.author | Chaudhari, B. | |
dc.contributor.author | Jiang, S. | |
dc.contributor.author | Cai, Z. | |
dc.date.accessioned | 2014-10-07T04:39:39Z | |
dc.date.available | 2014-10-07T04:39:39Z | |
dc.date.issued | 2005 | |
dc.identifier.citation | Li, B., Chua, S.J., Fitzgerald, E.A., Chaudhari, B., Jiang, S., Cai, Z. (2005). 3×2 integrated microphotonic switches. Proceedings of SPIE - The International Society for Optical Engineering 5625 (PART 2) : 785-792. ScholarBank@NUS Repository. https://doi.org/10.1117/12.566426 | |
dc.identifier.issn | 0277786X | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/83296 | |
dc.description.abstract | A microphotonic switch with three input waveguides and two output waveguides and integrated with an optical power splitter has been proposed. It is fabricated on the multimode interference principle in Si-based SiGe material system and configured for a 3 × 2 symmetrical structure of the three input waveguides and the two output waveguides of the device. The central waveguide section is based on a multimode interference and incorporated with an activated carrier injection element. The operating wavelengths of the device are specially designed for 1545, 1550, and 1555 nm conventional-band wavelengths. The measured crosstalk is at around -17 dB and the average insertion loss is about 2.3 dB. At switch-ON state, the measured injection current is 370 mA corresponding to an injection current density of 950 A/cm2. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1117/12.566426 | |
dc.source | Scopus | |
dc.subject | Integrated optics | |
dc.subject | Microphotonic switch | |
dc.subject | Multimode interference | |
dc.subject | Optical power splitter | |
dc.subject | Optical waveguide | |
dc.subject | Optoelectronic device | |
dc.subject | Semiconductor materials | |
dc.subject | Silicon-germanium | |
dc.type | Conference Paper | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1117/12.566426 | |
dc.description.sourcetitle | Proceedings of SPIE - The International Society for Optical Engineering | |
dc.description.volume | 5625 | |
dc.description.issue | PART 2 | |
dc.description.page | 785-792 | |
dc.description.coden | PSISD | |
dc.identifier.isiut | 000228325300096 | |
Appears in Collections: | Staff Publications |
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