Please use this identifier to cite or link to this item: https://doi.org/10.1116/1.1421565
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dc.titleX-ray photoemission spectroscopy study of silicidation of Ti on BF2 +-implanted polysilicon
dc.contributor.authorChua, H.N.
dc.contributor.authorPey, K.L.
dc.contributor.authorLai, W.H.
dc.contributor.authorChai, J.W.
dc.contributor.authorPan, J.S.
dc.contributor.authorChua, D.H.C.
dc.contributor.authorSiah, S.Y.
dc.date.accessioned2014-10-07T04:39:28Z
dc.date.available2014-10-07T04:39:28Z
dc.date.issued2001-11
dc.identifier.citationChua, H.N., Pey, K.L., Lai, W.H., Chai, J.W., Pan, J.S., Chua, D.H.C., Siah, S.Y. (2001-11). X-ray photoemission spectroscopy study of silicidation of Ti on BF2 +-implanted polysilicon. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 19 (6) : 2252-2257. ScholarBank@NUS Repository. https://doi.org/10.1116/1.1421565
dc.identifier.issn10711023
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83281
dc.description.abstractFluorine reactions between Ti and Si at the interface during Ti silicidation at temperatures ranging from 500 to 700 °C were studied. The types of fluorosilyl moieties formed during this interaction were identified. The binding energy shifts observed in the F 1s XPS spectra during silicidation may result from Ti-F, Si-F, and Si-F-O bond formation. A further increase in the annealing temperature beyond 550°C led to significant out-diffusion of fluorine containing species from the reaction layer.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1116/1.1421565
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1116/1.1421565
dc.description.sourcetitleJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
dc.description.volume19
dc.description.issue6
dc.description.page2252-2257
dc.description.codenJVTBD
dc.identifier.isiut000173159900041
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