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|Title:||X-ray photoemission spectroscopy study of silicidation of Ti on BF2 +-implanted polysilicon||Authors:||Chua, H.N.
|Issue Date:||Nov-2001||Citation:||Chua, H.N., Pey, K.L., Lai, W.H., Chai, J.W., Pan, J.S., Chua, D.H.C., Siah, S.Y. (2001-11). X-ray photoemission spectroscopy study of silicidation of Ti on BF2 +-implanted polysilicon. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 19 (6) : 2252-2257. ScholarBank@NUS Repository. https://doi.org/10.1116/1.1421565||Abstract:||Fluorine reactions between Ti and Si at the interface during Ti silicidation at temperatures ranging from 500 to 700 °C were studied. The types of fluorosilyl moieties formed during this interaction were identified. The binding energy shifts observed in the F 1s XPS spectra during silicidation may result from Ti-F, Si-F, and Si-F-O bond formation. A further increase in the annealing temperature beyond 550°C led to significant out-diffusion of fluorine containing species from the reaction layer.||Source Title:||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures||URI:||http://scholarbank.nus.edu.sg/handle/10635/83281||ISSN:||10711023||DOI:||10.1116/1.1421565|
|Appears in Collections:||Staff Publications|
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