Please use this identifier to cite or link to this item:
|Title:||Work-function tuning of TaN by high-temperature metal intermixing technique for gate-first CMOS process||Authors:||Ren, C.
Dual work function (WF)
|Issue Date:||2006||Citation:||Ren, C., Chan, D.S.H., Loh, W.Y., Balakumar, S., Du, A.Y., Tung, C.H., Lo, G.Q., Kumar, R., Balasubramanian, N., Kwong, D.-L. (2006). Work-function tuning of TaN by high-temperature metal intermixing technique for gate-first CMOS process. IEEE Electron Device Letters 27 (10) : 811-813. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2006.882569||Abstract:||This letter investigates the feasibility of adjusting the work function (WF) of TaN metal gate by intermixing (InM) of ultra-thin TaN/Metal stacks at high temperature. This could be useful for the integration of dual-WF metal gates in a gate-first CMOS process without exposing gate dielectric during metal-etching process. TaN/Tb and TaN/Ir stacks were studied, and it is found that the WF of TaN can be readily modulated through metal InM in TaN/Tb stack after high-temperature treatment (∼1000°C), which simulates the source/drain dopant activation process in a gate-first CMOS process. Factors affecting the InM process will be discussed. Successful transistor threshold voltage adjustment by ∼300 mV on high-kappa HfTaON/HfO2 dielectrics has also been demonstrated in TaN/Tb stack using this technique. © 2006 IEEE.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/83280||ISSN:||07413106||DOI:||10.1109/LED.2006.882569|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.