Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2007.907130
DC FieldValue
dc.titleWork function tunability of refractory metal nitrides by lanthanum or aluminum doping for advanced CMOS devices
dc.contributor.authorWang, X.P.
dc.contributor.authorLim, A.E.-J.
dc.contributor.authorYu, H.Y.
dc.contributor.authorLi, M.-F.
dc.contributor.authorRen, C.
dc.contributor.authorLoh, W.-Y.
dc.contributor.authorZhu, C.X.
dc.contributor.authorChin, A.
dc.contributor.authorTrigg, A.D.
dc.contributor.authorYeo, Y.-C.
dc.contributor.authorBiesemans, S.
dc.contributor.authorLo, G.-Q.
dc.contributor.authorKwong, D.-L.
dc.date.accessioned2014-10-07T04:39:25Z
dc.date.available2014-10-07T04:39:25Z
dc.date.issued2007-11
dc.identifier.citationWang, X.P., Lim, A.E.-J., Yu, H.Y., Li, M.-F., Ren, C., Loh, W.-Y., Zhu, C.X., Chin, A., Trigg, A.D., Yeo, Y.-C., Biesemans, S., Lo, G.-Q., Kwong, D.-L. (2007-11). Work function tunability of refractory metal nitrides by lanthanum or aluminum doping for advanced CMOS devices. IEEE Transactions on Electron Devices 54 (11) : 2871-2877. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2007.907130
dc.identifier.issn00189383
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83278
dc.description.abstractA lanthanum (La)-doped HfN is investigated as an n-type metal gate electrode on SiO2 with tunable work function. The variation of La concentration in (HfxLa1-x) Ny modulates the gate work function from 4.6 to 3.9 eV and remains stable after high-temperature annealing (900 °C to 1000 °C), which makes it suitable for n-channel MOSFET application. An ultrathin high-k dielectric layer was formed at the metal/SiO2 interface due to the (HfxLa1-x) Ny and SiO2 interaction during annealing. This causes a slight reduction in the effective oxide thickness and improves the tunneling current of the gate dielectric by two to three orders. We also report the tunability of TaN with Al doping, which is suitable for a p-type metal gate work function. Based on our results, several dual-gate integration processes by incorporating lanthanum or aluminum into a refractory metal nitride for CMOS technology are proposed. © 2007 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/TED.2007.907130
dc.sourceScopus
dc.subject(HfxLa1-x) Ny
dc.subject(TaxAl1-x)Ny
dc.subjectHigh-k gate dielectric
dc.subjectMetal gate
dc.subjectMOSFET
dc.subjectWork function tuning
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/TED.2007.907130
dc.description.sourcetitleIEEE Transactions on Electron Devices
dc.description.volume54
dc.description.issue11
dc.description.page2871-2877
dc.description.codenIETDA
dc.identifier.isiut000250590200009
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

14
checked on Feb 3, 2023

WEB OF SCIENCETM
Citations

11
checked on Feb 3, 2023

Page view(s)

149
checked on Feb 2, 2023

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.