Please use this identifier to cite or link to this item:
https://doi.org/10.1109/TED.2008.2011572
Title: | Work function engineering within a single metal gate stack: Manipulating terbium- and aluminum-induced interface dipoles of opposing polarity | Authors: | Lim, A.E.-J. Kwong, D.-L. Yeo, Y.-C. |
Keywords: | Aluminum (Al) Interface dipole Metal gate Terbium (Tb) Work function engineering |
Issue Date: | 2009 | Citation: | Lim, A.E.-J., Kwong, D.-L., Yeo, Y.-C. (2009). Work function engineering within a single metal gate stack: Manipulating terbium- and aluminum-induced interface dipoles of opposing polarity. IEEE Transactions on Electron Devices 56 (3) : 466-473. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2008.2011572 | Abstract: | In this paper, a systematic study on combining n-type and p-type interface dipoles for metal gate work function (Φm) engineering within the same gate stack was conducted. Ultrathin terbium (Tb) and aluminum (Al)-based interlayers (ILs) were utilized for n- and p-type dipole formation, respectively, to modulate the net interface dipole magnitude and polarity within a metal gate stack. By controlling the net interface dipole through Tb- and Al-based ILs, continuous TaN Φm tunability of ∼0.7-0.8 eV (after either a 500 °C or 950 °C anneal) on SiO2 dielectric was attained. The reversal of net interface dipole polarity was demonstrated using both TaN/SiO2 and TaN/high-κ gate stacks by varying IL metal species and anneal conditions. A convenient way in reversing a Tb-induced (n-type) dipole through Al-incorporation via the TaN metal gate using a "gate-first" process is also shown. The dominant dipole that results in the metal gate stack hinges critically on the reactions of Al and Tb with SiO2 (or underlying SiO2 for high-κ stacks) for Al-O-(Si) and Tb-O-Si bond formation, respectively. This concept of manipulating interface dipoles of opposing polarity for metal gate Φm tunability could open up new avenues for achieving multiple Φm using a single metal gate and a simple integration scheme. © 2009 IEEE. | Source Title: | IEEE Transactions on Electron Devices | URI: | http://scholarbank.nus.edu.sg/handle/10635/83277 | ISSN: | 00189383 | DOI: | 10.1109/TED.2008.2011572 |
Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
SCOPUSTM
Citations
7
checked on Feb 3, 2023
WEB OF SCIENCETM
Citations
6
checked on Feb 3, 2023
Page view(s)
150
checked on Feb 2, 2023
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.