Very low noise RF nMOSFETs on pastic by substrate thinning and wafer transfer

Abstract

A very low minimum noise figure (N Fmin) of 1.2 dB and a high associated gain of 12.8 dB at 10 GHz were measured for six-finger, 0.18-μm radio frequency (RF) metal-oxide semiconductor field-effect transistors mounted on insulating plastic following substrate-thinning (∼ 30 μm) and wafer transfer. Before this process, the devices had a slightly better RF performance of 1.1-dB N Fmin and a 13.7-dB associated gain. Thesmall RF performance degradation of the active transistors transferred to plastic shows the potential of integrating electronics onto plastic. © 2005 IEEE.