Please use this identifier to cite or link to this item: https://doi.org/10.1109/LMWC.2005.858999
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dc.titleVery low noise RF nMOSFETs on pastic by substrate thinning and wafer transfer
dc.contributor.authorKao, H.L.
dc.contributor.authorHung, B.F.
dc.contributor.authorChin, A.
dc.contributor.authorLai, J.M.
dc.contributor.authorLee, C.F.
dc.contributor.authorMcAlister, S.P.
dc.contributor.authorChi, C.C.
dc.date.accessioned2014-10-07T04:39:10Z
dc.date.available2014-10-07T04:39:10Z
dc.date.issued2005-11
dc.identifier.citationKao, H.L., Hung, B.F., Chin, A., Lai, J.M., Lee, C.F., McAlister, S.P., Chi, C.C. (2005-11). Very low noise RF nMOSFETs on pastic by substrate thinning and wafer transfer. IEEE Microwave and Wireless Components Letters 15 (11) : 757-759. ScholarBank@NUS Repository. https://doi.org/10.1109/LMWC.2005.858999
dc.identifier.issn15311309
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83260
dc.description.abstractA very low minimum noise figure (N Fmin) of 1.2 dB and a high associated gain of 12.8 dB at 10 GHz were measured for six-finger, 0.18-μm radio frequency (RF) metal-oxide semiconductor field-effect transistors mounted on insulating plastic following substrate-thinning (∼ 30 μm) and wafer transfer. Before this process, the devices had a slightly better RF performance of 1.1-dB N Fmin and a 13.7-dB associated gain. Thesmall RF performance degradation of the active transistors transferred to plastic shows the potential of integrating electronics onto plastic. © 2005 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LMWC.2005.858999
dc.sourceScopus
dc.subjectAssociated gain
dc.subjectMetal-oxide semiconductor field-effect transistor (MOSFET)
dc.subjectMinimum noise figure
dc.subjectPlastic
dc.subjectRadio frequency (RF)
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LMWC.2005.858999
dc.description.sourcetitleIEEE Microwave and Wireless Components Letters
dc.description.volume15
dc.description.issue11
dc.description.page757-759
dc.description.codenIMWCB
dc.identifier.isiut000233208200013
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