Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2005.856708
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dc.titleVery high-density (23 fF/μm2) RF MIM capacitors using high-κ TaTiO as the dielectric
dc.contributor.authorChiang, K.C.
dc.contributor.authorLai, C.H.
dc.contributor.authorChin, A.
dc.contributor.authorWang, T.J.
dc.contributor.authorChiu, H.F.
dc.contributor.authorChen, J.-R.
dc.contributor.authorMcAlister, S.P.
dc.contributor.authorChi, C.C.
dc.date.accessioned2014-10-07T04:39:10Z
dc.date.available2014-10-07T04:39:10Z
dc.date.issued2005-10
dc.identifier.citationChiang, K.C., Lai, C.H., Chin, A., Wang, T.J., Chiu, H.F., Chen, J.-R., McAlister, S.P., Chi, C.C. (2005-10). Very high-density (23 fF/μm2) RF MIM capacitors using high-κ TaTiO as the dielectric. IEEE Electron Device Letters 26 (10) : 728-730. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2005.856708
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83259
dc.description.abstractA very high density of 23 fF/μm2 has been measured in RF metal-insulator-metal (MIM) capacitors which use high-κ TaTiO as the dielectric. In addition, the devices show a small reduction of 1.8% in the capacitance, from 100 kHz to 10 GHz. Together with these characteristics the MIM capacitors show low leakage currents and a small voltage-dependence of capacitance at 1 GHz. These TaTiO MIM capacitors should be useful for precision RF circuits. © 2005 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2005.856708
dc.sourceScopus
dc.subjectCapacitor
dc.subjectRF metal-insulator-metal (MIM)
dc.subjectTaTiO
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2005.856708
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume26
dc.description.issue10
dc.description.page728-730
dc.description.codenEDLED
dc.identifier.isiut000232208700010
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