Please use this identifier to cite or link to this item:
|Title:||Very high-density (23 fF/μm2) RF MIM capacitors using high-κ TaTiO as the dielectric||Authors:||Chiang, K.C.
RF metal-insulator-metal (MIM)
|Issue Date:||Oct-2005||Citation:||Chiang, K.C., Lai, C.H., Chin, A., Wang, T.J., Chiu, H.F., Chen, J.-R., McAlister, S.P., Chi, C.C. (2005-10). Very high-density (23 fF/μm2) RF MIM capacitors using high-κ TaTiO as the dielectric. IEEE Electron Device Letters 26 (10) : 728-730. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2005.856708||Abstract:||A very high density of 23 fF/μm2 has been measured in RF metal-insulator-metal (MIM) capacitors which use high-κ TaTiO as the dielectric. In addition, the devices show a small reduction of 1.8% in the capacitance, from 100 kHz to 10 GHz. Together with these characteristics the MIM capacitors show low leakage currents and a small voltage-dependence of capacitance at 1 GHz. These TaTiO MIM capacitors should be useful for precision RF circuits. © 2005 IEEE.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/83259||ISSN:||07413106||DOI:||10.1109/LED.2005.856708|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jan 15, 2021
WEB OF SCIENCETM
checked on Jan 5, 2021
checked on Jan 10, 2021
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.