Please use this identifier to cite or link to this item:
https://doi.org/10.1109/LED.2005.856708
Title: | Very high-density (23 fF/μm2) RF MIM capacitors using high-κ TaTiO as the dielectric | Authors: | Chiang, K.C. Lai, C.H. Chin, A. Wang, T.J. Chiu, H.F. Chen, J.-R. McAlister, S.P. Chi, C.C. |
Keywords: | Capacitor RF metal-insulator-metal (MIM) TaTiO |
Issue Date: | Oct-2005 | Citation: | Chiang, K.C., Lai, C.H., Chin, A., Wang, T.J., Chiu, H.F., Chen, J.-R., McAlister, S.P., Chi, C.C. (2005-10). Very high-density (23 fF/μm2) RF MIM capacitors using high-κ TaTiO as the dielectric. IEEE Electron Device Letters 26 (10) : 728-730. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2005.856708 | Abstract: | A very high density of 23 fF/μm2 has been measured in RF metal-insulator-metal (MIM) capacitors which use high-κ TaTiO as the dielectric. In addition, the devices show a small reduction of 1.8% in the capacitance, from 100 kHz to 10 GHz. Together with these characteristics the MIM capacitors show low leakage currents and a small voltage-dependence of capacitance at 1 GHz. These TaTiO MIM capacitors should be useful for precision RF circuits. © 2005 IEEE. | Source Title: | IEEE Electron Device Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/83259 | ISSN: | 07413106 | DOI: | 10.1109/LED.2005.856708 |
Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
SCOPUSTM
Citations
75
checked on Feb 6, 2023
WEB OF SCIENCETM
Citations
69
checked on Feb 6, 2023
Page view(s)
137
checked on Feb 2, 2023
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.