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|Title:||Very high-density (23 fF/μm2) RF MIM capacitors using high-κ TaTiO as the dielectric||Authors:||Chiang, K.C.
RF metal-insulator-metal (MIM)
|Issue Date:||Oct-2005||Citation:||Chiang, K.C., Lai, C.H., Chin, A., Wang, T.J., Chiu, H.F., Chen, J.-R., McAlister, S.P., Chi, C.C. (2005-10). Very high-density (23 fF/μm2) RF MIM capacitors using high-κ TaTiO as the dielectric. IEEE Electron Device Letters 26 (10) : 728-730. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2005.856708||Abstract:||A very high density of 23 fF/μm2 has been measured in RF metal-insulator-metal (MIM) capacitors which use high-κ TaTiO as the dielectric. In addition, the devices show a small reduction of 1.8% in the capacitance, from 100 kHz to 10 GHz. Together with these characteristics the MIM capacitors show low leakage currents and a small voltage-dependence of capacitance at 1 GHz. These TaTiO MIM capacitors should be useful for precision RF circuits. © 2005 IEEE.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/83259||ISSN:||07413106||DOI:||10.1109/LED.2005.856708|
|Appears in Collections:||Staff Publications|
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