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https://doi.org/10.1149/2.008203esl
Title: | Unipolar memristive switching in yttrium oxide and RESET current reduction using a yttrium interlayer | Authors: | Pi, C. Ren, Y. Liu, Z.Q. Chim, W.K. |
Issue Date: | 2012 | Citation: | Pi, C., Ren, Y., Liu, Z.Q., Chim, W.K. (2012). Unipolar memristive switching in yttrium oxide and RESET current reduction using a yttrium interlayer. Electrochemical and Solid-State Letters 15 (3) : G5-G7. ScholarBank@NUS Repository. https://doi.org/10.1149/2.008203esl | Abstract: | We report on the unipolar resistive switching (RS) phenomenon in yttrium oxide (Y 2O 3) metal-insulator-metal structures. The RS behavior for Y 2O 3 shows a superior ONOFF resistance ratio of greater than 10 6 and good memory retention reliability performance of at least 10 6 seconds at room temperature. By adding a thin yttrium (Y) layer to form a YY 2O 3 bilayer structure, a reduction in the RESET current by two orders of magnitude is achieved, which is advantageous in reducing the total switching energy consumption for resistive random access memory application. © 2011 The Electrochemical Society. | Source Title: | Electrochemical and Solid-State Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/83251 | ISSN: | 10990062 | DOI: | 10.1149/2.008203esl |
Appears in Collections: | Staff Publications |
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