Please use this identifier to cite or link to this item: https://doi.org/10.1007/s003390101044
DC FieldValue
dc.titleUltraviolet and visible Raman spectroscopy characterization of diamond-like carbon film growth by pulsed laser deposition
dc.contributor.authorHuang, S.M.
dc.contributor.authorSun, Z.
dc.contributor.authorLu, Y.F.
dc.contributor.authorHong, M.H.
dc.date.accessioned2014-10-07T04:39:01Z
dc.date.available2014-10-07T04:39:01Z
dc.date.issued2002-04
dc.identifier.citationHuang, S.M., Sun, Z., Lu, Y.F., Hong, M.H. (2002-04). Ultraviolet and visible Raman spectroscopy characterization of diamond-like carbon film growth by pulsed laser deposition. Applied Physics A: Materials Science and Processing 74 (4) : 519-523. ScholarBank@NUS Repository. https://doi.org/10.1007/s003390101044
dc.identifier.issn09478396
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83246
dc.description.abstractDiamond-like carbon (DLC) films were prepared by pulsed laser deposition at various substrate temperatures. These films have been studied using ultraviolet (UV, 244 nm) and visible (514 nm) micro-Raman scattering. The Raman characteristics and structural changes in the films are found as a function of deposition temperature. The total sp3 fraction in the film remains almost constant at a temperature not greater than 200 °C and shows a sharp decrease at a temperature greater than 200 °C. In the visible Raman spectra, only vibrational modes of sp2-bonded carbon (G and D peaks) are observed. A wide peak, called the T peak, located at 1080-1260 cm-1, associated with the vibrational mode of sp3-bonded carbon, appears in the UV Raman spectra from DLC films deposited at temperatures from 25 to 200 °C. In the visible Raman spectra, the G-peak width and the intensity ratio I(D)/I(G) are sensitive to the structural changes induced by the change of the deposition temperature. In the UV Raman spectra, both G peak and T peak positions are sensitive to these structural changes.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1007/s003390101044
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentDATA STORAGE INSTITUTE
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1007/s003390101044
dc.description.sourcetitleApplied Physics A: Materials Science and Processing
dc.description.volume74
dc.description.issue4
dc.description.page519-523
dc.description.codenAPAMF
dc.identifier.isiut000174673300012
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