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|Title:||Ultimate resolution limits for scanning electron microscope immersion objective lenses||Authors:||Khursheed, A.||Keywords:||Low voltage scanning electron microscopy||Issue Date:||2002||Citation:||Khursheed, A. (2002). Ultimate resolution limits for scanning electron microscope immersion objective lenses. Optik (Jena) 113 (2) : 67-77. ScholarBank@NUS Repository.||Abstract:||This paper sets out to establish resolution limits for electron objective immersion lenses that can be used for high resolution scanning electron microscopy. On-axis aberration coefficients, both spherical (Cs) and chromatic (Cc), are calculated for immersion lenses that are: purely magnetic, of the electric retarding field type, and that have mixed electric-magnetic fields. The aperture lens model is used to derive a general framework by which these lenses can be compared. Simulation results show that the mixed field electric-magnetic immersion lens is expected to provide the best image resolution. For a primary beam landing energy of 1 keV, and for field strength limits set by magnetic saturation and vacuum electrical field breakdown, the lowest on-axis aberration coefficients predicted for this lens lie between 50 μm to 60 μm.||Source Title:||Optik (Jena)||URI:||http://scholarbank.nus.edu.sg/handle/10635/83238||ISSN:||00304026|
|Appears in Collections:||Staff Publications|
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