Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2010.2047240
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dc.titleTunneling field-effect transistor: Capacitance components and modeling
dc.contributor.authorYang, Y.
dc.contributor.authorTong, X.
dc.contributor.authorYang, L.-T.
dc.contributor.authorGuo, P.-F.
dc.contributor.authorFan, L.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:38:51Z
dc.date.available2014-10-07T04:38:51Z
dc.date.issued2010-07
dc.identifier.citationYang, Y., Tong, X., Yang, L.-T., Guo, P.-F., Fan, L., Yeo, Y.-C. (2010-07). Tunneling field-effect transistor: Capacitance components and modeling. IEEE Electron Device Letters 31 (7) : 752-754. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2010.2047240
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83231
dc.description.abstractWe report a numerical simulation study of gate capacitance components in a tunneling field-effect transistor (TFET), showing key differences in the partitioning of gate capacitance between the source and drain as compared with a MOSFET. A compact model for TFET capacitance components, including parasitic and inversion capacitances, was built and calibrated with computer-aided design data. This model should be useful for further investigation of performance of circuits containing TFETs. The dependence of gatedrain capacitance C gd on drain design and gate length was further investigated for reduction of switching delay in TFETs. © 2010 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2010.2047240
dc.sourceScopus
dc.subjectModeling
dc.subjectparasitic capacitance
dc.subjecttunneling field-effect transistor (TFET)
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2010.2047240
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume31
dc.description.issue7
dc.description.page752-754
dc.description.codenEDLED
dc.identifier.isiut000281833100040
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