Please use this identifier to cite or link to this item: https://doi.org/10.1021/nn800031m
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dc.titleTunable stress and controlled thickness modification in graphene by annealing
dc.contributor.authorNi, Z.H.
dc.contributor.authorWang, H.M.
dc.contributor.authorMa, Y.
dc.contributor.authorKasim, J.
dc.contributor.authorWu, Y.H.
dc.contributor.authorShen, Z.X.
dc.date.accessioned2014-10-07T04:38:44Z
dc.date.available2014-10-07T04:38:44Z
dc.date.issued2008-05
dc.identifier.citationNi, Z.H., Wang, H.M., Ma, Y., Kasim, J., Wu, Y.H., Shen, Z.X. (2008-05). Tunable stress and controlled thickness modification in graphene by annealing. ACS Nano 2 (5) : 1033-1039. ScholarBank@NUS Repository. https://doi.org/10.1021/nn800031m
dc.identifier.issn19360851
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83223
dc.description.abstractGraphene has many unique properties which make it an attractive material for fundamental study as well as for potential applications. In this paper, we report the first experimental study of process-induced defects and stress in graphene using Raman spectroscopy and imaging. While defects lead to the observation of defect-related Raman bands, stress causes shift in phonon frequency. A compressive stress (as high as 2.1 GPa) was induced in graphene by depositing a 5 nm SiO2 followed by annealing, whereas a tensile stress (∼0.7 GPa) was obtained by depositing a thin silicon capping layer. In the former case, both the magnitude of the compressive stress and number of graphene layers can be controlled or modified by the annealing temperature. As both the stress and thickness affect the physical properties of graphene, this study may open up the possibility of utilizing thickness and stress engineering to improve the performance of graphene-based devices. Local heating techniques may be used to either induce the stress or reduce the thickness selectively. © 2008 American Chemical Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1021/nn800031m
dc.sourceScopus
dc.subjectAnnealing
dc.subjectDefects
dc.subjectGraphene
dc.subjectRaman
dc.subjectStress
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1021/nn800031m
dc.description.sourcetitleACS Nano
dc.description.volume2
dc.description.issue5
dc.description.page1033-1039
dc.identifier.isiut000256234000030
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