Please use this identifier to cite or link to this item: https://doi.org/10.1039/c3ta12461d
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dc.titleTransmission/absorption measurements for in situ monitoring of transparent conducting Ga:ZnO films grown via aqueous methods
dc.contributor.authorKevin, M.
dc.contributor.authorHo, G.W.
dc.date.accessioned2014-10-07T04:38:39Z
dc.date.available2014-10-07T04:38:39Z
dc.date.issued2013-12-07
dc.identifier.citationKevin, M., Ho, G.W. (2013-12-07). Transmission/absorption measurements for in situ monitoring of transparent conducting Ga:ZnO films grown via aqueous methods. Journal of Materials Chemistry A 1 (45) : 14239-14245. ScholarBank@NUS Repository. https://doi.org/10.1039/c3ta12461d
dc.identifier.issn20507488
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83216
dc.description.abstractIn this work, we devised a simple optical technique that allowed the nucleation and growth of Ga:ZnO films grown via aqueous synthesis at 90 °C to be studied in situ. Our two fold objective was to study the nucleation processes and to acquire real-time information of the film thickness. In doing so, the growth parameters (e.g. temperature, precursor concentration, and time) could be optimized to give the maximum yield, coupled with the ability to control the film thickness with a greater measure of precision and accuracy. We further demonstrated that such a degree of control could be used to fabricate transparent conducting electrodes of low sheet resistance (
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1039/c3ta12461d
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1039/c3ta12461d
dc.description.sourcetitleJournal of Materials Chemistry A
dc.description.volume1
dc.description.issue45
dc.description.page14239-14245
dc.description.codenJMCAE
dc.identifier.isiut000326465100027
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