Please use this identifier to cite or link to this item: https://doi.org/10.1186/1556-276X-7-544
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dc.titleThree-dimensional AlZnO/Al2O3/AlZnO nanocapacitor arrays on Si substrate for energy storage
dc.contributor.authorLi, L.-J.
dc.contributor.authorZhu, B.
dc.contributor.authorDing, S.-J.
dc.contributor.authorLu, H.-L.
dc.contributor.authorSun, Q.-Q.
dc.contributor.authorJiang, A.
dc.contributor.authorZhang, D.W.
dc.contributor.authorZhu, C.
dc.date.accessioned2014-10-07T04:38:30Z
dc.date.available2014-10-07T04:38:30Z
dc.date.issued2012
dc.identifier.citationLi, L.-J., Zhu, B., Ding, S.-J., Lu, H.-L., Sun, Q.-Q., Jiang, A., Zhang, D.W., Zhu, C. (2012). Three-dimensional AlZnO/Al2O3/AlZnO nanocapacitor arrays on Si substrate for energy storage. Nanoscale Research Letters 7 : 1-12. ScholarBank@NUS Repository. https://doi.org/10.1186/1556-276X-7-544
dc.identifier.issn19317573
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83204
dc.description.abstractHigh density three-dimensional AZO/Al2O3/AZO nanocapacitor arrays have been fabricated for energy storage applications. Using atomic layer deposition technique, the stack of AZO/Al2O3/AZO has been grown in the porous anodic alumina template which is directly formed on the Si substrate. The fabricated capacitor shows a high capacitance density of 15.3 fF/μm2 at 100 kHz, which is nearly 2.5 times over the planar capacitor under identical conditions in theory. Further, the charge-discharge characteristics of the capacitor are characterized, indicating that the resistance-capacitance time constants are equal to 300 ns for the charging and discharging processes, and have no dependence on the voltage supply. This reflects good power characteristics of the electrostatic capacitor. © 2012 Li et al.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1186/1556-276X-7-544
dc.sourceScopus
dc.subjectAAO
dc.subjectCapacitance density
dc.subjectEnergy storage
dc.subjectNanocapacitor arrays
dc.subjectRC time constant
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1186/1556-276X-7-544
dc.description.sourcetitleNanoscale Research Letters
dc.description.volume7
dc.description.page1-12
dc.identifier.isiut000313975700001
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