Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2908168
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dc.titleThermally stable polymer memory devices based on a π -conjugated triad
dc.contributor.authorLing, Q.-D.
dc.contributor.authorKang, E.-T.
dc.contributor.authorNeoh, K.-G.
dc.contributor.authorChen, Y.
dc.contributor.authorZhuang, X.-D.
dc.contributor.authorZhu, C.
dc.contributor.authorChan, D.S.H.
dc.date.accessioned2014-10-07T04:38:27Z
dc.date.available2014-10-07T04:38:27Z
dc.date.issued2008
dc.identifier.citationLing, Q.-D., Kang, E.-T., Neoh, K.-G., Chen, Y., Zhuang, X.-D., Zhu, C., Chan, D.S.H. (2008). Thermally stable polymer memory devices based on a π -conjugated triad. Applied Physics Letters 92 (14) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2908168
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83199
dc.description.abstractPolymer memory devices based on a π -conjugated poly [9,9-bis(4-diphenylaminophenyl)-2,7-fluorene] covalently bridged, Disperse Red 1 (a dye) triad were fabricated. The devices exhibit electrical bistability in the I-V characteristics and can be used to perform read-write-erase memory functions. The memory devices exhibit good performance with an on/off current ratio up to 103 and stable on and off states under a constant voltage stress and read pulses. Furthermore, memory retention tests show that it is possible to preserve both states at 150 °C under ambient atmosphere for about 1 h when using Cu as the top electrode. © 2008 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.2908168
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentCHEMICAL & BIOMOLECULAR ENGINEERING
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.2908168
dc.description.sourcetitleApplied Physics Letters
dc.description.volume92
dc.description.issue14
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000254940500089
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