1. ScholarBank@NUS
  2. 1. Staff
  3. Staff Publications
Please use this identifier to cite or link to this item: https://doi.org/10.1149/2.014206esl
DC FieldValue
dc.titleThermally stable multi-phase nickel-platinum stanogermanide contacts for germanium-tin channel MOSFETs
dc.contributor.authorWang, L.
dc.contributor.authorHan, G.
dc.contributor.authorSu, S.
dc.contributor.authorZhou, Q.
dc.contributor.authorYang, Y.
dc.contributor.authorGuo, P.
dc.contributor.authorWang, W.
dc.contributor.authorTong, Y.
dc.contributor.authorLim, P.S.Y.
dc.contributor.authorLiu, B.
dc.contributor.authorKong, E.Y.-J.
dc.contributor.authorXue, C.
dc.contributor.authorWang, Q.
dc.contributor.authorCheng, B.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:38:26Z
dc.date.available2014-10-07T04:38:26Z
dc.date.issued2012
dc.identifier.citationWang, L., Han, G., Su, S., Zhou, Q., Yang, Y., Guo, P., Wang, W., Tong, Y., Lim, P.S.Y., Liu, B., Kong, E.Y.-J., Xue, C., Wang, Q., Cheng, B., Yeo, Y.-C. (2012). Thermally stable multi-phase nickel-platinum stanogermanide contacts for germanium-tin channel MOSFETs. Electrochemical and Solid-State Letters 15 (6) : H179-H181. ScholarBank@NUS Repository. https://doi.org/10.1149/2.014206esl
dc.identifier.issn10990062
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83198
dc.description.abstractWe demonstrate a novel metal stanogermanide contact metallization process for high mobility germanium-tin (GeSn) channel MOSFETs. The multi-phase nickel-platinum stanogermanide Ni(GeSn)Pt x(GeSn) y contacts are formed by reacting Ni-Pt alloy with Ge 0.947Sn 0.053 alloy, which is epitaxially grown on Ge (100) substrate by solid source molecular beam epitaxy (MBE). Compared with nickel stanogermanide Ni(GeSn) contacts, the Pt-incorporated contacts, i.e. Ni(GeSn)Pt x(GeSn) y, exhibit enhanced thermal stability in a wide range of formation temperatures and have superior surface morphology even after thermal processing. The proposed contacts are attractive for the integration in high mobility GeSn MOSFETs. © 2012 The Electrochemical Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1149/2.014206esl
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1149/2.014206esl
dc.description.sourcetitleElectrochemical and Solid-State Letters
dc.description.volume15
dc.description.issue6
dc.description.pageH179-H181
dc.description.codenESLEF
dc.identifier.isiut000306716000009
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.