Please use this identifier to cite or link to this item: https://doi.org/10.1116/1.1507339
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dc.titleThermal reaction of nickel and Si0.75Ge0.25 alloy
dc.contributor.authorPey, K.L.
dc.contributor.authorChoi, W.K.
dc.contributor.authorChattopadhyay, S.
dc.contributor.authorZhao, H.B.
dc.contributor.authorFitzgerald, E.A.
dc.contributor.authorAntoniadis, D.A.
dc.contributor.authorLee, P.S.
dc.date.accessioned2014-10-07T04:38:21Z
dc.date.available2014-10-07T04:38:21Z
dc.date.issued2002-11
dc.identifier.citationPey, K.L., Choi, W.K., Chattopadhyay, S., Zhao, H.B., Fitzgerald, E.A., Antoniadis, D.A., Lee, P.S. (2002-11). Thermal reaction of nickel and Si0.75Ge0.25 alloy. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 20 (6) : 1903-1910. ScholarBank@NUS Repository. https://doi.org/10.1116/1.1507339
dc.identifier.issn07342101
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83191
dc.description.abstractThermal reactions of nickel and Si0.75Ge0.25 alloy were investigated. The silicided films were characterized by X-ray diffraction, Auger electron spectroscopy, scanning electron microscopy, transmission electron microscopy, and micro-Raman microscopy techniques. It was found that the sheet resistance of the silicided films increased abruptly for annealing temperature above 800°C.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1116/1.1507339
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1116/1.1507339
dc.description.sourcetitleJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
dc.description.volume20
dc.description.issue6
dc.description.page1903-1910
dc.description.codenJVTAD
dc.identifier.isiut000179441700012
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