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|Title:||Thermal instability of effective work function in metal/high-κ stack and its material dependence||Authors:||Joo, M.S.
|Issue Date:||Nov-2004||Citation:||Joo, M.S., Cho, B.J., Balasubramanian, N., Kwong, D.-L. (2004-11). Thermal instability of effective work function in metal/high-κ stack and its material dependence. IEEE Electron Device Letters 25 (11) : 716-718. ScholarBank@NUS Repository.||Abstract:||Thermal instability of effective work function and its material dependence on metal/high-κ gate stacks is investigated. It is found that thermal instability of the effective work function of metal electrode on a gate dielectric is strongly dependent on the gate electrode and dielectric material. Thermal instability of a metal gate is related to the presence of silicon at the interface, and the Fermi-level pinning position is dependent on the location of silicon at the interface. The silicon-metal or metal-silicon bond formation by thermal anneal at the metal/dielectric interface induces the donor-like or acceptor-like interface states, causing a change of effective work function. © 2004 IEEE.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/83190||ISSN:||07413106|
|Appears in Collections:||Staff Publications|
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