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|Title:||Theoretical study of a cross-waveguide resonator-based silicon electro-optic modulator with low power consumption||Authors:||Xin, M.
|Issue Date:||1-Nov-2009||Citation:||Xin, M., Danner, A.J., Png, C.E., Lim, S.T. (2009-11-01). Theoretical study of a cross-waveguide resonator-based silicon electro-optic modulator with low power consumption. Journal of the Optical Society of America B: Optical Physics 26 (11) : 2176-2180. ScholarBank@NUS Repository. https://doi.org/10.1364/JOSAB.26.002176||Abstract:||A cross-waveguide resonator structure is proposed for silicon electro-optic modulators operating around the near-infrared (NIR) communication wavelength of 1550 nm. The device is modeled based on a silicon-on- insulator wafer with a compact surface area of 16 μm2 (4 μm × 4 μm) and the modulation is achieved by resonance peak shift caused by carrier injection-based refractive index perturbation. It is shown via numerical study that the modulation speed of the device hits 2.9 GHz and 3 dB frequency around 4 GHz, while the DC power consumption is only 17.3 mW. An optimum modulation depth of 5.7 dB was found after tuning the optical confinement of the cavity. © 2009 Optical Society of America.||Source Title:||Journal of the Optical Society of America B: Optical Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/83184||ISSN:||07403224||DOI:||10.1364/JOSAB.26.002176|
|Appears in Collections:||Staff Publications|
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