Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.jmmm.2006.01.066
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dc.titleTheoretical model of spin transfer torque in multilayers
dc.contributor.authorJalil, M.B.A.
dc.contributor.authorTan, S.G.
dc.date.accessioned2014-10-07T04:38:16Z
dc.date.available2014-10-07T04:38:16Z
dc.date.issued2006-08
dc.identifier.citationJalil, M.B.A., Tan, S.G. (2006-08). Theoretical model of spin transfer torque in multilayers. Journal of Magnetism and Magnetic Materials 303 (2 SPEC. ISS.) : 333-337. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jmmm.2006.01.066
dc.identifier.issn03048853
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83183
dc.description.abstractWe present a model of spin transport in a Co/Cu(1 1 1)/Co pseudo-spin-valve (PSV) structure where current is flowing in the current perpendicular-to-plane (CPP) geometry. The model considers ballistic spin-dependent transmission at the two Co-Cu interfaces, as well as diffusive spin relaxation within the Cu spacer and free Co layer. In the latter, the spin relaxation process is composed of the usual longitudinal spin relaxation due to spin flip scattering, as well as transverse spin relaxation due to spin precession. The resulting spin transfer torque exerted on the moments within the free Co layer is composed of two contributions, the main contribution coming from "absorbed" spins in the interfacial regions. The second contribution arises from the relaxation of spin accumulation within the free Co layer. The calculated critical current density for switching is estimated to be approximately between 3.3×107 and 1.1×108 A/cm2, which is in agreement with available experimental results. © 2006 Elsevier B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.jmmm.2006.01.066
dc.sourceScopus
dc.subjectCurrent-induced magnetization switching
dc.subjectSpin absorption
dc.subjectSpin current
dc.subjectSpin transfer torque
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1016/j.jmmm.2006.01.066
dc.description.sourcetitleJournal of Magnetism and Magnetic Materials
dc.description.volume303
dc.description.issue2 SPEC. ISS.
dc.description.page333-337
dc.description.codenJMMMD
dc.identifier.isiut000237992400013
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