Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2009.2030873
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dc.titleThe role of carbon and dysprosium in Ni[Dy]Si:C contacts for schottky-barrier height reduction and application in N-channel MOSFETs with Si:C source/drain stressors
dc.contributor.authorLee, R.T.P.
dc.contributor.authorKoh, A.T.-Y.
dc.contributor.authorTan, K.-M.
dc.contributor.authorLiow, T.-Y.
dc.contributor.authorChi, D.Z.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:38:12Z
dc.date.available2014-10-07T04:38:12Z
dc.date.issued2009
dc.identifier.citationLee, R.T.P., Koh, A.T.-Y., Tan, K.-M., Liow, T.-Y., Chi, D.Z., Yeo, Y.-C. (2009). The role of carbon and dysprosium in Ni[Dy]Si:C contacts for schottky-barrier height reduction and application in N-channel MOSFETs with Si:C source/drain stressors. IEEE Transactions on Electron Devices 56 (11) : 2770-2777. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2009.2030873
dc.identifier.issn00189383
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83178
dc.description.abstractWe clarify the role of carbon and dysprosium in nickel-dysprosium-silicide (Ni[Dy]Si:C) contacts formed on silicon:carbon (Si1-y}Cy or Si:C) for Schottky-barrier height (SBH) reduction. Carbon-induced energy bandgap Eg narrowing and the segregation of dysprosium (Dy) at the Ni[Dy]Si:C/Si:C interface were shown to be responsible for SBH reduction in this paper. First, we show that electron barrier height (ΦB N) reduction of up to 69 meV (or 10.3%) for NiSi can be achieved with the scaling of substitutional carbon Csub concentration from 0% to 1.0%. Second, new evidence revealing the segregation of Dy-based interlayer at the Ni[Dy]Si:C/Si:C interface and an additional 321 meV (or 53%) reduction in ΦB N for NiSi:C are presented. This could be due to charge transfer at the Ni[Dy]Si:C/Si:C interface. The successful modulation of ΦB N for Ni[Dy]S:C translates to an effective 41% reduction in device REXT, resulting in improved drive current performance. This opens new avenues to optimize the Si1-yCy contact interface for extending transistor performance in future technological generations. © 2009 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/TED.2009.2030873
dc.sourceScopus
dc.subjectDysprosium
dc.subjectFinFET
dc.subjectNickel silicide
dc.subjectSchottky barrier
dc.subjectSilicon:carbon
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/TED.2009.2030873
dc.description.sourcetitleIEEE Transactions on Electron Devices
dc.description.volume56
dc.description.issue11
dc.description.page2770-2777
dc.description.codenIETDA
dc.identifier.isiut000271019500051
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