Please use this identifier to cite or link to this item:
https://doi.org/10.1016/j.tsf.2004.05.047
DC Field | Value | |
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dc.title | The interfacial reaction of Ni with (111)Ge, (100)Si0.75Ge 0.25 and (100)Si at 400 °C | |
dc.contributor.author | Jin, L.J. | |
dc.contributor.author | Pey, K.L. | |
dc.contributor.author | Choi, W.K. | |
dc.contributor.author | Fitzgerald, E.A. | |
dc.contributor.author | Antoniadis, D.A. | |
dc.contributor.author | Pitera, A.J. | |
dc.contributor.author | Lee, M.L. | |
dc.contributor.author | Chi, D.Z. | |
dc.contributor.author | Tung, C.H. | |
dc.date.accessioned | 2014-10-07T04:38:10Z | |
dc.date.available | 2014-10-07T04:38:10Z | |
dc.date.issued | 2004-09 | |
dc.identifier.citation | Jin, L.J., Pey, K.L., Choi, W.K., Fitzgerald, E.A., Antoniadis, D.A., Pitera, A.J., Lee, M.L., Chi, D.Z., Tung, C.H. (2004-09). The interfacial reaction of Ni with (111)Ge, (100)Si0.75Ge 0.25 and (100)Si at 400 °C. Thin Solid Films 462-463 (SPEC. ISS.) : 151-155. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2004.05.047 | |
dc.identifier.issn | 00406090 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/83175 | |
dc.description.abstract | The reaction of Ni with Ge, Si0.75Ge0.25 and Si using rapid thermal annealing (RTA) and in-situ annealing method at 400 °C produces different phases, as revealed by cross-sectional transmission electron microscopy (TEM). A uniform film of nickel germanide (NiGe) was formed at 400 °C for the Ni reaction with Ge using the in-situ annealing technique, whereas Ni3Ge2 and NiGe phases were found using the RTA method. For the reaction between Ni and Si, a highly textured NiSi film was obtained at 400 °C for RTA whereas Ni3Si2 and NiSi were found using the in-situ annealing method. On the other hand, a relatively uniform NiSiGe was formed using RTA; Ni3(Si1-yGe y)2 and Ni(Si1-xGex) (x | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.tsf.2004.05.047 | |
dc.source | Scopus | |
dc.subject | In-situ annealing | |
dc.subject | Ni germanide | |
dc.subject | Ni germanosilicide | |
dc.subject | Ni silicide | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1016/j.tsf.2004.05.047 | |
dc.description.sourcetitle | Thin Solid Films | |
dc.description.volume | 462-463 | |
dc.description.issue | SPEC. ISS. | |
dc.description.page | 151-155 | |
dc.description.coden | THSFA | |
dc.identifier.isiut | 000223812800032 | |
Appears in Collections: | Staff Publications |
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