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dc.titleThe interfacial reaction of Ni with (111)Ge, (100)Si0.75Ge 0.25 and (100)Si at 400 °C
dc.contributor.authorJin, L.J.
dc.contributor.authorPey, K.L.
dc.contributor.authorChoi, W.K.
dc.contributor.authorFitzgerald, E.A.
dc.contributor.authorAntoniadis, D.A.
dc.contributor.authorPitera, A.J.
dc.contributor.authorLee, M.L.
dc.contributor.authorChi, D.Z.
dc.contributor.authorTung, C.H.
dc.identifier.citationJin, L.J., Pey, K.L., Choi, W.K., Fitzgerald, E.A., Antoniadis, D.A., Pitera, A.J., Lee, M.L., Chi, D.Z., Tung, C.H. (2004-09). The interfacial reaction of Ni with (111)Ge, (100)Si0.75Ge 0.25 and (100)Si at 400 °C. Thin Solid Films 462-463 (SPEC. ISS.) : 151-155. ScholarBank@NUS Repository.
dc.description.abstractThe reaction of Ni with Ge, Si0.75Ge0.25 and Si using rapid thermal annealing (RTA) and in-situ annealing method at 400 °C produces different phases, as revealed by cross-sectional transmission electron microscopy (TEM). A uniform film of nickel germanide (NiGe) was formed at 400 °C for the Ni reaction with Ge using the in-situ annealing technique, whereas Ni3Ge2 and NiGe phases were found using the RTA method. For the reaction between Ni and Si, a highly textured NiSi film was obtained at 400 °C for RTA whereas Ni3Si2 and NiSi were found using the in-situ annealing method. On the other hand, a relatively uniform NiSiGe was formed using RTA; Ni3(Si1-yGe y)2 and Ni(Si1-xGex) (x
dc.subjectIn-situ annealing
dc.subjectNi germanide
dc.subjectNi germanosilicide
dc.subjectNi silicide
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitleThin Solid Films
dc.description.issueSPEC. ISS.
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