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|Title:||The influence of V defects on luminescence properties of AlInGaN quaternary alloys||Authors:||Soh, C.B.
|Issue Date:||2-Feb-2005||Citation:||Soh, C.B., Chua, S.J., Tripathy, S., Liu, W., Chi, D.Z. (2005-02-02). The influence of V defects on luminescence properties of AlInGaN quaternary alloys. Journal of Physics Condensed Matter 17 (4) : 729-736. ScholarBank@NUS Repository. https://doi.org/10.1088/0953-8984/17/4/015||Abstract:||In a certain growth mode, V pits have been observed in Al yIn xGa 1-x-yN grown by metal-organic chemical vapour deposition. Room temperature photoluminescence (PL) spectra from these quaternary alloys show strong bandto-band emission with equally intense yellow luminescence (YL). Simultaneous measurements of the PL intensity and topography using ultraviolet-visible near field scanning optical microscopy show that the enhanced YL intensity originates from the V pits whereas the intensity of the band edge PL decreases in the vicinity of pits. The strong YL emission can be related to the defect clusters associated with impurity decoration at dislocation lines and sidewalls of the pits. A higher degree of Al incorporation at partially filled V pits leads to the multiple near band edge PL peaks.||Source Title:||Journal of Physics Condensed Matter||URI:||http://scholarbank.nus.edu.sg/handle/10635/83174||ISSN:||09538984||DOI:||10.1088/0953-8984/17/4/015|
|Appears in Collections:||Staff Publications|
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