Please use this identifier to cite or link to this item: https://doi.org/10.1143/JJAP.43.L1208
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dc.titleThe electrical and material properties of HfO xN y dielectric on germanium substrate
dc.contributor.authorZhang, Q.
dc.contributor.authorWu, N.
dc.contributor.authorZhu, C.
dc.date.accessioned2014-10-07T04:38:07Z
dc.date.available2014-10-07T04:38:07Z
dc.date.issued2004-09-15
dc.identifier.citationZhang, Q., Wu, N., Zhu, C. (2004-09-15). The electrical and material properties of HfO xN y dielectric on germanium substrate. Japanese Journal of Applied Physics, Part 2: Letters 43 (9 AB) : L1208-L1210. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.43.L1208
dc.identifier.issn00214922
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83170
dc.description.abstractHafnium oxynitride (HfO xN y) film was investigated as a possible gate dielectric of germanium metal-oxide-semiconductor (MOS) device. The thin HfO xN y dielectric was prepared using reactive sputtering, followed by post deposition annealing (PDA). The dependence of the equivalent oxide thickness (EOT) on PDA condition was investigated. A small EOT of 19.7 Å with a low leakage current of 3.1 × 10 -5 A/cm 2 (V g = 1 V) was achieved with PDA at 600°C. In addition, the material properties of HfO xN y on germanium were analyzed by X-ray photoelectron spectroscopy. The nitrogen is found to pile up at the dielectric/substrate interface and to form Ge-N bonds, which contribute to the interfacial layer (IL) suppression.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1143/JJAP.43.L1208
dc.sourceScopus
dc.subjectAnnealing
dc.subjectDeposition
dc.subjectGermanium
dc.subjectHafnium oxynitride
dc.subjectMOS capacitor
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1143/JJAP.43.L1208
dc.description.sourcetitleJapanese Journal of Applied Physics, Part 2: Letters
dc.description.volume43
dc.description.issue9 AB
dc.description.pageL1208-L1210
dc.description.codenJAPLD
dc.identifier.isiut000224441000027
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