Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3475400
DC FieldValue
dc.titleThe effects of cap layers on electrical properties of indium nitride films
dc.contributor.authorLiu, W.
dc.contributor.authorTan, R.J.N.
dc.contributor.authorSoh, C.B.
dc.contributor.authorChua, S.J.
dc.date.accessioned2014-10-07T04:38:05Z
dc.date.available2014-10-07T04:38:05Z
dc.date.issued2010-07-26
dc.identifier.citationLiu, W., Tan, R.J.N., Soh, C.B., Chua, S.J. (2010-07-26). The effects of cap layers on electrical properties of indium nitride films. Applied Physics Letters 97 (4) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3475400
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83167
dc.description.abstractThe unintentional n-type doping in the indium nitride thin films was investigated. The electron density decreases from 3.5× 1019 to 9× 1018 cm-3 and the mobility increases from 4 to 457 cm2 V-1 s-1 when the thickness increases from 50 to 350 nm. This can be explained by assuming the film consists of a surface accumulation layer and a bulk layer. It was found that the accumulation layer can be eliminated by capping the surface with silicon nitride, GaN or zinc nitride of 2 nm each, respectively; while an AlN cap layer will cause the formation of two-dimensional electron gas at the AlN/InN interface. © 2010 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.3475400
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.3475400
dc.description.sourcetitleApplied Physics Letters
dc.description.volume97
dc.description.issue4
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000281059200049
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

10
checked on Apr 9, 2021

WEB OF SCIENCETM
Citations

10
checked on Apr 9, 2021

Page view(s)

63
checked on Apr 12, 2021

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.