Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2005.848130
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dc.titleThe effect of IrO2-IrO2- Hf-LaAlO3 gate dielectric on the bias-temperature instability of 3-D GOI CMOSFETs
dc.contributor.authorYu, D.S.
dc.contributor.authorLiao, C.C.
dc.contributor.authorCheng, C.F.
dc.contributor.authorChin, A.
dc.contributor.authorLi, M.F.
dc.contributor.authorMcAlister, S.P.
dc.date.accessioned2014-10-07T04:38:01Z
dc.date.available2014-10-07T04:38:01Z
dc.date.issued2005-06
dc.identifier.citationYu, D.S., Liao, C.C., Cheng, C.F., Chin, A., Li, M.F., McAlister, S.P. (2005-06). The effect of IrO2-IrO2- Hf-LaAlO3 gate dielectric on the bias-temperature instability of 3-D GOI CMOSFETs. IEEE Electron Device Letters 26 (6) : 407-409. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2005.848130
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83161
dc.description.abstractWe have studied the bias-temperature instability of three-dimensional self-aligned metal-gate/high-Κ/Germanium-on-insulator (GOI) CMOSFETs, which were integrated on underlying 0.18 μm CMOSFETs. The devices used IrO2-IrO2-Hf dual gates and a high-Κ LaAiO3 gate dielectric, and gave an equivalent-oxide thickness (EOT) of 1.4 mn. The metal-gate/high-Κ/GOI p-and n-MOSFETs displayed threshold voltage (Vt) shifts of 30 and 21 mV after 10 MV/cm, 85 °C stress for 1 h, comparable with values for the control two-dimensional (2-D) metal-gate/high-Κ-Si CMOSFETs. An extrapolated maximum voltage of - 1.2 and 1.4 V for a ten-year lifetime was obtained from the bias-temperature stress measurements on the GOI CMOSFETs. © 2005 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2005.848130
dc.sourceScopus
dc.subjectBias-temperature instability (BTI)
dc.subjectGermanium-on-insulator (GOI)
dc.subjectHigh Κ
dc.subjectLaAlO3
dc.subjectMetal gate
dc.subjectThree-dimensional (3-D)
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2005.848130
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume26
dc.description.issue6
dc.description.page407-409
dc.description.codenEDLED
dc.identifier.isiut000229522000021
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