Please use this identifier to cite or link to this item: https://doi.org/10.1023/B:IJIM.0000047443.74769.7b
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dc.titleTemperature effects on the performance of on-chip spiral inductors used in RF(MM)ICs
dc.contributor.authorShi, J.
dc.contributor.authorKang, K.
dc.contributor.authorYeo, T.-S.
dc.contributor.authorWu, B.
dc.contributor.authorLiao, H.
dc.contributor.authorXiong, Y.Z.
dc.contributor.authorRustagi, S.C.
dc.date.accessioned2014-10-07T04:37:51Z
dc.date.available2014-10-07T04:37:51Z
dc.date.issued2004-10
dc.identifier.citationShi, J., Kang, K., Yeo, T.-S., Wu, B., Liao, H., Xiong, Y.Z., Rustagi, S.C. (2004-10). Temperature effects on the performance of on-chip spiral inductors used in RF(MM)ICs. International Journal of Infrared and Millimeter Waves 25 (10) : 1511-1522. ScholarBank@NUS Repository. https://doi.org/10.1023/B:IJIM.0000047443.74769.7b
dc.identifier.issn01959271
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83151
dc.description.abstractBased on the measured S-parameters and proposed circuit model for on-chip spiral inductors, the overall effects of temperature rise on the inductor performance are examined in this paper. For circular spiral inductors on silicon substrates, it is shown that when the temperature increases from 25°C to 85°C, the peak values of Q-factor (Q max) of inductors, corresponding to the turn number N = 3 to 7, decrease about 8.8% to 19%, respectively. The metal trace and silicon substrate resistances both increase linearly with temperature, while the capacitance of silicon substrate has a negative temperature coefficient. For a square spiral inductor on GaAs substrate, its Q max decreases about 37.2% as temperature increases from 25 °C to 185 °C. The corresponding frequency f max tends to shift from 9.44 GHz to 7.73 GHz. and it is reduced about 18.1%.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1023/B:IJIM.0000047443.74769.7b
dc.sourceScopus
dc.subjectGaAs
dc.subjectMetal trace resistance
dc.subjectOn-chip spiral inductors
dc.subjectQ-factor
dc.subjectSilicon
dc.subjectTemperature coefficients
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1023/B:IJIM.0000047443.74769.7b
dc.description.sourcetitleInternational Journal of Infrared and Millimeter Waves
dc.description.volume25
dc.description.issue10
dc.description.page1511-1522
dc.description.codenIJIWD
dc.identifier.isiut000224991500011
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