Please use this identifier to cite or link to this item: https://doi.org/10.1103/PhysRevB.85.064105
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dc.titleSystematic study of ferroelectric, interfacial, oxidative, and doping effects on conductance of Pt/BaTiO 3/Pt ferroelectic tunnel junctions
dc.contributor.authorShen, L.
dc.contributor.authorZhou, T.
dc.contributor.authorBai, Z.
dc.contributor.authorZeng, M.
dc.contributor.authorGoh, J.Q.
dc.contributor.authorYuan, Z.-M.
dc.contributor.authorHan, G.
dc.contributor.authorLiu, B.
dc.contributor.authorFeng, Y.P.
dc.date.accessioned2014-10-07T04:37:47Z
dc.date.available2014-10-07T04:37:47Z
dc.date.issued2012-02-09
dc.identifier.citationShen, L., Zhou, T., Bai, Z., Zeng, M., Goh, J.Q., Yuan, Z.-M., Han, G., Liu, B., Feng, Y.P. (2012-02-09). Systematic study of ferroelectric, interfacial, oxidative, and doping effects on conductance of Pt/BaTiO 3/Pt ferroelectic tunnel junctions. Physical Review B - Condensed Matter and Materials Physics 85 (6) : -. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevB.85.064105
dc.identifier.issn10980121
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83145
dc.description.abstractUsing the nonequilibrium Green's function method combined with density functional theory, we systematically study the ferroelectric, interfacial, oxidative, and doping effects on electron transport of BaTiO 3-based ferroelectric tunnel junctions (Pt/BaTiO 3/Pt). The ferroelectric effect reduces the tunneling conductance compared to nonferroelectric BaTiO 3 due to the large decay rate of the Δ5 (p y and d yz) band. The TiO 2-terminated interface shows a better tunneling conductance than the BaO-terminated interface since electrons mainly transport through the Ti 3d-O p bonding state. Interfacial oxidation strongly reduces the conductance due to trapping of electrons and interfacial charge localization by additional O ions, while Nb doping enhances the conductance due to the delocalized distribution of charges on orbitals of the transport channel. Our studies provide a useful guide to practical applications of tunnel junctions with ferroelectric barriers. © 2012 American Physical Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1103/PhysRevB.85.064105
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1103/PhysRevB.85.064105
dc.description.sourcetitlePhysical Review B - Condensed Matter and Materials Physics
dc.description.volume85
dc.description.issue6
dc.description.page-
dc.description.codenPRBMD
dc.identifier.isiut000300086800001
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