Please use this identifier to cite or link to this item:
DC FieldValue
dc.titleSynthesis of nickel mono-silicide nanowire by chemical vapor deposition on nickel film: Role of surface nickel oxides
dc.contributor.authorSun, Z.-Q.
dc.contributor.authorWhang, S.-J.
dc.contributor.authorYang, W.-F.
dc.contributor.authorLee, S.-J.
dc.identifier.citationSun, Z.-Q., Whang, S.-J., Yang, W.-F., Lee, S.-J. (2009-04). Synthesis of nickel mono-silicide nanowire by chemical vapor deposition on nickel film: Role of surface nickel oxides. Japanese Journal of Applied Physics 48 (4 PART 2) : -. ScholarBank@NUS Repository.
dc.description.abstractWe synthesized nickel mono-silicide nanowires (NiSi-NWs) on electron-beam-evaporated Ni films with SiH4/H2 gases in a chemical-vapordeposition chamber, and studied the growth mechanism of NiSi-NW by investigating various synthesis conditions. Results show that NiO and Ni 2O3 phases coexist on nickel surface and agglomerate after heating and the initial growth of NiSi-NW is triggered by the Ni 2O3. The effects of these surface nickel-oxides on NiSi-NW growth were investigated, and a synthesis model based-on vapor-liquid-solid mechanism with the aid of nickel diffusion to initiate NiSi-NW synthesis is proposed. It is also found that the diameter of NiSi-NW is mainly controlled by the synthesis temperature and the activation energy of NiSi-NW formation is estimated to be 1.72 eV. © 2009 The Japan Society of Applied Physics.
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitleJapanese Journal of Applied Physics
dc.description.issue4 PART 2
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.