Please use this identifier to cite or link to this item: https://doi.org/10.1088/0957-4484/18/38/385302
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dc.titleSynthesis and structural characterization of germanium nanowires from glancing angle deposition
dc.contributor.authorChoi, W.K.
dc.contributor.authorLi, L.
dc.contributor.authorChew, H.G.
dc.contributor.authorZheng, F.
dc.date.accessioned2014-10-07T04:37:40Z
dc.date.available2014-10-07T04:37:40Z
dc.date.issued2007-09-26
dc.identifier.citationChoi, W.K., Li, L., Chew, H.G., Zheng, F. (2007-09-26). Synthesis and structural characterization of germanium nanowires from glancing angle deposition. Nanotechnology 18 (38) : -. ScholarBank@NUS Repository. https://doi.org/10.1088/0957-4484/18/38/385302
dc.identifier.issn09574484
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83135
dc.description.abstractGe nanowires were fabricated on the Si substrates by the glancing angle deposition technique. Effects of the flux angle, substrate temperature and deposition rate on the synthesis of Ge nanowires were examined. We observed that the porosity of the film increased as the flux angle became more oblique. Our Raman results showed that samples deposited with a higher substrate temperature and at a flux angle of 87°led to an improvement in the crystallinity of the films. It is possible to obtain isolated, single-crystalline Ge nanowires using this technique with a flux angle of 87°, at a substrate temperature of 330°C and a deposition rate of 0.2 Å s-1. Rapid thermal annealing of such nanowires at 600°C resulted in the formation of amorphous nanoclusters. © IOP Publishing Ltd.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1088/0957-4484/18/38/385302
dc.description.sourcetitleNanotechnology
dc.description.volume18
dc.description.issue38
dc.description.page-
dc.description.codenNNOTE
dc.identifier.isiut000249283100004
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