Please use this identifier to cite or link to this item:
|Title:||Synthesis and structural characterization of germanium nanowires from glancing angle deposition||Authors:||Choi, W.K.
|Issue Date:||26-Sep-2007||Citation:||Choi, W.K., Li, L., Chew, H.G., Zheng, F. (2007-09-26). Synthesis and structural characterization of germanium nanowires from glancing angle deposition. Nanotechnology 18 (38) : -. ScholarBank@NUS Repository. https://doi.org/10.1088/0957-4484/18/38/385302||Abstract:||Ge nanowires were fabricated on the Si substrates by the glancing angle deposition technique. Effects of the flux angle, substrate temperature and deposition rate on the synthesis of Ge nanowires were examined. We observed that the porosity of the film increased as the flux angle became more oblique. Our Raman results showed that samples deposited with a higher substrate temperature and at a flux angle of 87°led to an improvement in the crystallinity of the films. It is possible to obtain isolated, single-crystalline Ge nanowires using this technique with a flux angle of 87°, at a substrate temperature of 330°C and a deposition rate of 0.2 Å s-1. Rapid thermal annealing of such nanowires at 600°C resulted in the formation of amorphous nanoclusters. © IOP Publishing Ltd.||Source Title:||Nanotechnology||URI:||http://scholarbank.nus.edu.sg/handle/10635/83135||ISSN:||09574484||DOI:||10.1088/0957-4484/18/38/385302|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 18, 2020
WEB OF SCIENCETM
checked on Feb 11, 2020
checked on Feb 16, 2020
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.