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|Title:||Synthesis and field emission properties of well-aligned ZnO nanowires on buffer layer||Authors:||Ong, W.L.
|Issue Date:||1-Oct-2010||Citation:||Ong, W.L., Lim, S.X., Sow, C.H., Zhang, C., Ho, G.W. (2010-10-01). Synthesis and field emission properties of well-aligned ZnO nanowires on buffer layer. Thin Solid Films 518 (24 SUPPL.) : e139-e142. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2010.03.101||Abstract:||Well-aligned ZnO nanowires were grown on Si (111) substrates pre-coated with a ZnO buffer layer. The nanowires are single-crystalline wurtzite structures with a preferential growth in the  direction. Room temperature photoluminescence (PL) measurements of as-grown nanowires annealed in argon and air exhibited a strong ultraviolet emission and suppressed visible emission, affirming the presence of few defects. Field emission properties of the nanowires were investigated, and the lowest turn-on field obtained was 3.8 V/μm at a current density of 0.1 μA/cm2, with a corresponding field enhancement factor β of 1644. Current-voltage (I-V) and capacitance-voltage (C-V) measurements showed that the contact was ohmic and the ZnO nanowires were n-type, with little C-V hysteresis. © 2010 Elsevier B.V.||Source Title:||Thin Solid Films||URI:||http://scholarbank.nus.edu.sg/handle/10635/83133||ISSN:||00406090||DOI:||10.1016/j.tsf.2010.03.101|
|Appears in Collections:||Staff Publications|
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