Please use this identifier to cite or link to this item: https://doi.org/10.1021/ja062489n
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dc.titleSynthesis and dynamic random access memory behavior of a functional polyimide
dc.contributor.authorLing, Q.-D.
dc.contributor.authorChang, F.-C.
dc.contributor.authorSong, Y.
dc.contributor.authorZhu, C.-X.
dc.contributor.authorLiaw, D.-J.
dc.contributor.authorChan, D.S.-H.
dc.contributor.authorKang, E.-T.
dc.contributor.authorNeoh, K.-G.
dc.date.accessioned2014-10-07T04:37:38Z
dc.date.available2014-10-07T04:37:38Z
dc.date.issued2006-07-12
dc.identifier.citationLing, Q.-D., Chang, F.-C., Song, Y., Zhu, C.-X., Liaw, D.-J., Chan, D.S.-H., Kang, E.-T., Neoh, K.-G. (2006-07-12). Synthesis and dynamic random access memory behavior of a functional polyimide. Journal of the American Chemical Society 128 (27) : 8732-8733. ScholarBank@NUS Repository. https://doi.org/10.1021/ja062489n
dc.identifier.issn00027863
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83132
dc.description.abstractThe device under testing was a plastic dynamic random access memory based on a donor-functionalized polyimide (TP6F-PI), which exhibited the ability to write, read, erase, and refresh the electrical states. The device had an ON/OFF current ratio up to 105, promising minimal misreading error. Both the on and off states were stable under a constant voltage stress of 1 V and survived up to 108 read cycles at 1 V. Copyright © 2006 American Chemical Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1021/ja062489n
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentCHEMICAL & BIOMOLECULAR ENGINEERING
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1021/ja062489n
dc.description.sourcetitleJournal of the American Chemical Society
dc.description.volume128
dc.description.issue27
dc.description.page8732-8733
dc.description.codenJACSA
dc.identifier.isiut000238728000016
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