Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3589351
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dc.titleSwitching of saturation magnetization by carrier injection in YBa 2 Cu3 O7-δ /α -Fe2 O3 /Nb- SrTiO3 junctions
dc.contributor.authorChen, Y.
dc.contributor.authorLian, G.
dc.contributor.authorXiong, G.
dc.contributor.authorVenkatesan, T.
dc.date.accessioned2014-10-07T04:37:37Z
dc.date.available2014-10-07T04:37:37Z
dc.date.issued2011-06-06
dc.identifier.citationChen, Y., Lian, G., Xiong, G., Venkatesan, T. (2011-06-06). Switching of saturation magnetization by carrier injection in YBa 2 Cu3 O7-δ /α -Fe2 O3 /Nb- SrTiO3 junctions. Applied Physics Letters 98 (23) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3589351
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83130
dc.description.abstractFerromagnetic (FM) α -Fe2 O3 layers were deposited on n -type oxide semiconductor substrates of Nb-doped SrTiO 3 (NSTO) to form YBa2 Cu3 O 7-δ/α -Fe2 O3 /NSTO junctions. Multilevel resistance switching behavior was observed in YBa2 Cu 3 O7-δ /α -Fe2 O3 /NSTO junctions with stable resistive states. The saturation magnetization M S of the YBa2 Cu3 O7-δ /α -Fe2 O3 /NSTO junctions was modulated by carrier injection and correlated with the conductivity of the switched state. This is the first report of simultaneous modulation of intrinsic magnetic and transport properties for FM oxide devices by using carrier injection. © 2011 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.3589351
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.3589351
dc.description.sourcetitleApplied Physics Letters
dc.description.volume98
dc.description.issue23
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000291658900054
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