Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1875733
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dc.titleSurface passivation using ultrathin AlN x film for Ge-metal-oxide-semiconductor devices with hafnium oxide gate dielectric
dc.contributor.authorGao, F.
dc.contributor.authorLee, S.J.
dc.contributor.authorPan, J.S.
dc.contributor.authorTang, L.J.
dc.contributor.authorKwong, D.-L.
dc.date.accessioned2014-10-07T04:37:33Z
dc.date.available2014-10-07T04:37:33Z
dc.date.issued2005-03-14
dc.identifier.citationGao, F., Lee, S.J., Pan, J.S., Tang, L.J., Kwong, D.-L. (2005-03-14). Surface passivation using ultrathin AlN x film for Ge-metal-oxide-semiconductor devices with hafnium oxide gate dielectric. Applied Physics Letters 86 (11) : 1-3. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1875733
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83125
dc.description.abstractA surface passivation method to improve the film quality of HfO 2 gate dielectric on Ge substrate by using ultrathin AlN x layer is reported. Results show that the AlN x passivation layer is more effective in suppressing the GeO x formation at the HfO 2/Ge interface, resulting in improved C-V characteristics, than surface nitridation-passivated Ge devices. In addition, a thermal stability study shows AlN x passivation is promising for future Ge metal-oxide-semiconductor devices. © 2005 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1875733
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.1875733
dc.description.sourcetitleApplied Physics Letters
dc.description.volume86
dc.description.issue11
dc.description.page1-3
dc.description.codenAPPLA
dc.identifier.isiut000228050700099
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