Please use this identifier to cite or link to this item:;2-M
Title: Surface Modification and Ohmic Contact Formation to n and p-Type GaN
Authors: Choi, H.W.
Chua, S.J. 
Kang, X.J. 
Issue Date: Nov-2001
Citation: Choi, H.W.,Chua, S.J.,Kang, X.J. (2001-11). Surface Modification and Ohmic Contact Formation to n and p-Type GaN. Physica Status Solidi (A) Applied Research 188 (1) : 399-402. ScholarBank@NUS Repository.;2-M
Abstract: Surface modification of n and p-type GaN using Cl2/N2 and pure N2 plasmas was investigated. It was found that the surface conductivity of n-GaN was reduced when N2 was introduced, as N2 loss was prevented. However, the restoration of stoichiometry improved the resistivity of Ohmic contacts, as N2 was necessary for the formation of TiN. In contrast, N2 plasma exposure was beneficial to improvements of surface conductivities in p-GaN. Contacts deposited on Cl2/N2 etched surfaces exhibit excellent Ohmic characteristics.
Source Title: Physica Status Solidi (A) Applied Research
ISSN: 00318965
DOI: 10.1002/1521-396X(200111)188:13.0.CO;2-M
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