Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2006.883677
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dc.titleSubstrate effects on resonant frequency of silicon-based RF on-chip MIM capacitor
dc.contributor.authorXiong, Y.-Z.
dc.contributor.authorYu, M.-B.
dc.contributor.authorLo, G.-Q.
dc.contributor.authorLi, M.-F.
dc.contributor.authorKwong, D.-L.
dc.date.accessioned2014-10-07T04:37:24Z
dc.date.available2014-10-07T04:37:24Z
dc.date.issued2006-11
dc.identifier.citationXiong, Y.-Z., Yu, M.-B., Lo, G.-Q., Li, M.-F., Kwong, D.-L. (2006-11). Substrate effects on resonant frequency of silicon-based RF on-chip MIM capacitor. IEEE Transactions on Electron Devices 53 (11) : 2839-2842. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2006.883677
dc.identifier.issn00189383
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83111
dc.description.abstractThis brief presents an analytical model that describes a silicon-based RF on-chip metal-insulator-metal (MIM) capacitor including the parasitics originating from its coupling with backend intermetal dielectric (IMD) scheme and the substrate. Results show that the resonant frequency fre depends on the intrinsic capacitance, inductance, and substrate effects of the MIM. The model and fre formula are verified experimentally for several types of MIM capacitors (i.e., high κ and Si3N4 based) integrated on different IMDs (e.g., undoped glass and low κ). The results also show that for a given CMIM, if the capacitance density is increased further so that the area is shrunk, and the inductances are reduced to a level that is comparable to the substrate effects from item ε0εr ρSiheff SiR2/heff IMD, then further fre improvement could be limited. © 2006 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/TED.2006.883677
dc.sourceScopus
dc.subjectBackend intermetal dielectric (IMD)
dc.subjectHigh κ
dc.subjectMetal-insulator-metal (MIM)
dc.subjectModeling
dc.subjectOn-chip capacitor
dc.subjectResonant frequency
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/TED.2006.883677
dc.description.sourcetitleIEEE Transactions on Electron Devices
dc.description.volume53
dc.description.issue11
dc.description.page2839-2842
dc.description.codenIETDA
dc.identifier.isiut000241805300024
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