Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2007.901668
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dc.titleSub-0.1-eV effective Schottky-barrier height for NiSi on n-type Si (100) using antimony segregation
dc.contributor.authorWong, H.-S.
dc.contributor.authorChan, L.
dc.contributor.authorSamudra, G.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:37:21Z
dc.date.available2014-10-07T04:37:21Z
dc.date.issued2007-08
dc.identifier.citationWong, H.-S., Chan, L., Samudra, G., Yeo, Y.-C. (2007-08). Sub-0.1-eV effective Schottky-barrier height for NiSi on n-type Si (100) using antimony segregation. IEEE Electron Device Letters 28 (8) : 703-705. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.901668
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83106
dc.description.abstractWe report a new method of forming nickel silicide (NiSi) on n-Si with low contact resistance, which achieves a Schottky barrier height of as low as 0.074 eV. Antimony (Sb) and nickel were introduced simultaneously and annealed to form NiSi on n-Si (100). Sb dopant atoms were found to segregate at the NiSi/Si interface. The devices with Sb segregation show complete nickel monosilicide formation on n-Si (100) and a close-to-unity rectification ratio. The rectification ratio RC defined to be the ratio of the forward current to the reverse current, where the forward and reverse currents are measured using forward and reverse bias voltages, respectively, having the same magnitude of 0.5 V. This process is also compatible and easily integrated in a CMOS fabrication process flow. © 2007 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2007.901668
dc.sourceScopus
dc.subjectAntimony
dc.subjectNiSi
dc.subjectSchottky barrier (SB)
dc.subjectSegregation
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2007.901668
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume28
dc.description.issue8
dc.description.page703-705
dc.description.codenEDLED
dc.identifier.isiut000248315400012
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