Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.3465300
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dc.titleStudy on thermal stability of plasma-PH3 passivated HfAlO/In0.53Ga0.47 as gate stack for advanced metal-oxide-semiconductor field effect transistor
dc.contributor.authorSuleiman, S.A.
dc.contributor.authorOh, H.J.
dc.contributor.authorDu, A.
dc.contributor.authorNg, C.M.
dc.contributor.authorLee, S.J.
dc.date.accessioned2014-10-07T04:37:20Z
dc.date.available2014-10-07T04:37:20Z
dc.date.issued2010
dc.identifier.citationSuleiman, S.A., Oh, H.J., Du, A., Ng, C.M., Lee, S.J. (2010). Study on thermal stability of plasma-PH3 passivated HfAlO/In0.53Ga0.47 as gate stack for advanced metal-oxide-semiconductor field effect transistor. Electrochemical and Solid-State Letters 13 (10) : H336-H338. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3465300
dc.identifier.issn10990062
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83105
dc.description.abstractIn this work, we studied the thermal stability of a plasma- PH3 passivated HfAlO/ InGa0.53As0.47 gate stack for high speed metal-oxide-semiconductor field effect transistor (MOSFET) application, and results show excellent thermal stability up to 800°C with negligible changes in the equivalent oxide thickness, interface trap densities (Dit), and subthreshold slope. An increase in leakage current (1.10 × 10-4 A/ cm2 at Vg =1.5 V) after 800°C anneal can be attributed to the localized thinning of the gate dielectric and the rough interface caused by the out-diffusion of Ga/As, as observed by transmission electron microscopy and energy dispersion X-ray analysis. Dit measurement by the charge-trapping method showed suppressed Dit at the upper half of the bandgap for plasma-PH3 passivated devices, which is favorable for n-channel MOSFET operation. © 2010 The Electrochemical Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1149/1.3465300
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1149/1.3465300
dc.description.sourcetitleElectrochemical and Solid-State Letters
dc.description.volume13
dc.description.issue10
dc.description.pageH336-H338
dc.description.codenESLEF
dc.identifier.isiut000280769700009
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