Please use this identifier to cite or link to this item: https://doi.org/10.1007/s10948-005-2158-4
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dc.titleStructural and optical properties of Co-doped ZnO thin films
dc.contributor.authorPeng, Y.Z.
dc.contributor.authorLiew, T.
dc.contributor.authorSong, W.D.
dc.contributor.authorAn, C.W.
dc.contributor.authorTeo, K.L.
dc.contributor.authorChong, T.C.
dc.date.accessioned2014-10-07T04:37:13Z
dc.date.available2014-10-07T04:37:13Z
dc.date.issued2005
dc.identifier.citationPeng, Y.Z., Liew, T., Song, W.D., An, C.W., Teo, K.L., Chong, T.C. (2005). Structural and optical properties of Co-doped ZnO thin films. Journal of Superconductivity and Novel Magnetism 18 (1) : 97-103. ScholarBank@NUS Repository. https://doi.org/10.1007/s10948-005-2158-4
dc.identifier.issn15571939
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83095
dc.description.abstractCo-doped zinc oxide thin films (Zn1-xCoxO) have been deposited on c-plane sapphire substrates by dual-beam pulsed laser deposition. The films have lattice parameters similar to that of ZnO, and the lattice parameters are closely distributed. The films grew along a preferred direction, following the epitaxial relationship Zn1-xCoxO (0001)//substrate (0001). Excitonic emission was suppressed at higher Co-dopant concentration in ZnO because of increase in the distortion of host lattice and defects. When more Zn is replaced by Co, more impurity levels are developed within the bandgap, and more defect are generated. Under our experimental conditions, the bandgap of the films tends to increase with increasing dopant concentration. © 2005 Springer Science+Business Media, Inc.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1007/s10948-005-2158-4
dc.sourceScopus
dc.subjectCo-doped ZnO
dc.subjectDiluted magnetic semi-conductors
dc.subjectOptical properties
dc.subjectStructural properties
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1007/s10948-005-2158-4
dc.description.sourcetitleJournal of Superconductivity and Novel Magnetism
dc.description.volume18
dc.description.issue1
dc.description.page97-103
dc.identifier.isiut000228131800019
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